Overview of CNM LGAD results: boron Si-on-Si and epitaxial wafers

Abstract Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra p-layer below the collection electrode which provides signal amplification. When primary electrons reach amplification region new electron-hole pairs created that enhance generated signal. The moderate gain of these sensors, together relatively thin active region, provide precise time information for minimum ionizing particles. To mitigate effect pile-up at HL-LHC ATLAS and CMS experiments have chosen LGAD technology High Granularity Timing Detector (HGTD) End-Cap Layer (ETL), respectively. A full characterization recent productions fabricated CNM has been carried out before after neutron irradiation up to 2.5 × 10 15 n eq /cm 2 . Boron-doped produced in epitaxial Si-on-Si wafers studied. results include their electrically (IV bias voltage stability) performance studies (charge resolution) single pad devices a Sr-90 radioactive source set-up. behaviour Inter-Pad irradiated arrays, using Transient Current Technique (TCT), is shown. indicate higher resistivity perform better than ones.